Method of making an electronic device and the same

ABSTRACT

Laminated layers including semiconductor or metal thin layers and insulative thin layers are formed on a substrate and after the laminated layers are patterned, and the laminated layers are oxidized from their side to form an oxidized area. This way, a 0-dimensional quantum box or one-dimensional quantum line having fine tunnel junctions surrounded by the oxidized area and a 0-dimension quantum box or a one-dimensional quantum line made of semiconductor or metal area interposed between the oxidized area and the insulative thin layers are formed in the laminated layers.

This is a divisional application of U.S. Ser. No. 08/843,145, filed Apr.28, 1997, now U.S. Pat. No. 5,945,686.

BACKGROUND OF THE INVENTION

The present invention relates to a method of fabricating an electronicdevice suitable for single-electron devices, various quantum effectdevices and the like as well as to the electronic device fabricated bysuch a method.

In order to improve the performance of the electronic device, such as asilicon integrated circuit (LSI), fine-structuring of elementsconstituting the circuit is being advanced. However, MOS transistorsmainly used at present in the devices have a limitation in improvingintegration and operation speed by the fine-structuring whilesuppressing increased power consumption.

Recently, in order to solve this limitation, single-electron elementshave been proposed as electronic elements based on a new operationprinciple. When the elements are realized ideally, it is expected thatthe power delay product can be improved greatly. The single-electronelement is described in, for example, APPLIED PHYSICS, Vol. 63, No. 12(1994), pp. 1232-1238. Further, it is considered that the 0-dimensionalquantum box for confining electrons in an area of several nmthree-dimensionally can be used to improve the performance of lightemitting elements or the like greatly by the quantum effect. Inaddition, it is considered that a one-dimensional quantum line can beused to form one-dimensional electron gas, so that the mobility ofelectrons can be increased greatly and a high-speed switching elementcan be realized. The 0-dimensional quantum box ideally means thatelectrons are fixed at one point of coordinates and the one-dimensionalquantum line ideally means that electrons can be moved only in onedirection. The quantum effect elements are discussed in, for example,the report of the Institute of Electronics and Communication Engineersof Japan, Vol. 77, No. 11 (1994), pp. 1117-1124.

However, as discussed in the above paper, in order to operate thesingle-electron device at room temperature, it is necessary to fabricatea device structure having a size of several nm which is smaller by oneor two orders than several hundred nm for the size of the currentlyleading MOS transistor with accuracy. The quantum effect element such asthe 0-dimensional quantum box and the one-dimensional quantum line arealso the same.

For example, it is considered that an electron storage node is connectedthrough two tunnel junctions to an external wiring. When a voltage isapplied from the external wiring, electrons attempt to pass through theelectron storage node through the tunnel junctions. However, energy ofthe electron storage node is increased by the storage energy for oneelectron in a short time that the electron passes through the electronstorage node and consequently a next electron is prevented from enteringthe storage node subsequently. Thus, for example, by disposing a gateelectrode to change a potential of the electron storage node byapplication of a voltage from the gate, a tunnel current passing throughthe storage node can be controlled. However, in order to attain suchcontrol at room temperature, the energy in case where one electron isstored in the storage node must be sufficiently larger than thermalnoise.

In other words, e² /2C>kT and accordingly the following equation must besatisfied.

    C(aF)<929/T(K)

where e represents an elementary charge, C represents a capacitance ofthe electron storage node, T represents an operating temperature inKelvin, k represents the Boltzmann's constant, and a of aF represents anabbreviation of "atto-" meaning 10⁻¹⁸. When a sectional area, athickness and a dielectric constant of the two tunnel junctions are S, dand ε, respectively, the following equation is given using C=2εS/d

    S<e.sup.2 d/4εkT

For example, when the thickness of tunnel insulative layer is 2 nm, thesectional area S of the tunnel junctions is required to be madesufficiently smaller than 200 nm² in order to satisfy the abovecondition at the room temperature. That is, it is necessary to formtunnel junctions having a sectional area of at least 100 nm² or less,preferably several nm² to several tens nm².

At present, there is no fabricating apparatus capable of attaining suchsuper-fine structures and furthermore there is scarcely any prospectcapable of attaining mass production with good reproductivity. Further,in order to achieve stable operations for the single electron devices,it is desirable to form a multi-tunnel junction having tunnel junctionsformed in series, while a more complicated fabricating process isrequired therefor and it is difficult to cope with the process by thecurrent lithography technique.

Furthermore, an experimental result that thin layers are laminated on asubstrate to form tunnel junctions is reported in Journal ofNon-Crystalline Solids, 128 (1991), 91-100. However, there is noteaching as to how transistors, memories and light emitting elements arefabricated when the laminated structure is formed on the substrate inthe vertical direction to the substrate to form the tunnel junctions. Arelevant memory technique is disclosed in U.S. Ser. No. 291,752 filedAug. 16, 1994 and assigned to the same assignee as the present invention(U.S. Pat. No. 5,600,163).

SUMMARY OF THE INVENTION

It is an object of the present invention to provide a fabricating methodof an electronic device in which a semiconductor pattern formationapparatus and a device fabricating apparatus used in conventionalfabrication of a silicon integrated circuit can be used to accuratelyattain the dimension of several nm required to operate single-electronelements and various quantum effect elements at room temperature and anelectronic device having an element structure fabricated by this method.

In order to achieve the above object, according to the presentinvention, laminated layers including semiconductor or metal thin layersand insulative thin layers are formed on a substrate and after thelaminated layers are patterned, and the laminated layers are oxidizedfrom their side to form an oxidized area, so that a 0-dimensionalquantum box or one-dimensional quantum line having fine tunnel junctionssurrounded by the oxidized area and a 0-dimension quantum box orone-dimensional quantum line made of semiconductor or metal areainterposed between the oxidized area and the insulative thin layers areformed in the laminated layers.

When the laminated layers processed into the form of pillar areoxidized, the semiconductor or metal line including fine tunneljunctions or 0-dimensional quantum box on the way of the pillar in thecenter of the pillar and extending in the substantially perpendiculardirection to the substrate are obtained.

Alternatively, laminated layers in which semiconductor or metal thinlayers are interposed between a plurality of insulative layers areprocessed into an oblong rectangular parallelepiped and when therectangular parallelepiped is oxidized from its side, semiconductor ormetal lines extending in the substantially parallel direction to thesubstrate are obtained in the rectangular parallelepiped.

It is desirable that the thickness of the insulative thin layers and thesemiconductor or metal layers interposed between two insulative thinlayers is equal to or smaller than 20 nm. Particularly, it is desirablethat the insulative layers are thin. The thickness thereof is equal toor smaller than 10 nm, at the best 3 to 2 nm, for SiO₂ or SiN. It is notnecessary to thin the semiconductor or metal layers so much and thethickness thereof is satisfactory if it is about 20 nm. Further,oxidization is made until the oxidization speed is equal to or smallerthan one fourth, preferably one fifth, of a value in bulk of thesemiconductor or metal to thereby obtain the super-fine structurestably. The side of the laminated layers may be etched instead of theoxidization, so that the above various structures may be formed.

The above another object is achieved by oxidizing the laminated layerpattern including semiconductor or metal thin layers and insulative thinlayers from the side thereof in the electronic device to form aone-dimensional quantum line having fine tunnel junctions in thelaminated layer or forming semiconductor or metal area surrounded by theoxidized area and the insulative thin layers into a 0-dimensionalquantum box or one-dimensional quantum line.

The semiconductor/metal lines including tunnel junctions, electronstorage nodes (0-dimensional quantum box) and the like on the way in thecenter of the pillar-shaped insulator perpendicular to the substrate andthe semiconductor/metal lines extending in the parallel direction to thesubstrate in the center of the rectangular parallelepipedic insulatorare obtained. It is preferable that the diameter of the line and thedimension of the electron storage node or 0-dimensional quantum box areequal to or smaller than 20 nm. Silicon or the like, can be used as thesemiconductor. A gate electrode may be formed around the line or theelectron storage node.

Referring now to FIG. 1, fabricating processes of a device according tothe present invention are described simply.

The existing layer fabricating technique, the electron beam lithographymethod and the anisotropic etching can be used to form a column 5 madeof laminated layers 4 including silicon layers 2 and insulative layers 3on a substrate 1 as shown in FIG. 1A and having a diameter of severaltens nm (50 nm in this case). The column 5 having the laminatedstructure is oxidized from the side thereof. Although not shown, anoxidization prevention layer of, for example, silicon nitride layer isformed on an upper surface of the column 5 in order to perform theoxidization from only the side.

Consequently, only the silicon portions of the laminated layers areoxidized from the periphery of the column and the insulative layers areleft as they are. This is because since the oxidization is controlled atthe speed of diffusion of oxygen in the silicon oxide layer as shown inFIG. 1B, boundaries 8 of oxidized regions 6 and unoxidized regions 7 aremoved toward the center of the column in the vertical direction to thesurface of the column 5 regardless of the presence of the insulativelayers. Accordingly, after a proper oxidization time, as shown in FIG.1C, a silicon line 9 is formed in the center of the column 5 and a veryfine island 10 is formed in the silicon line 9 so that the island 10 isinterposed between two tunnel junctions 11 and 12. For example, adiameter thereof is 10 nm, preferably 3 to 5 nm and a sectional area ofa quantum line can be made to 100 nm² or less.

Since the island 10 thus formed is operated as an electron trap forcapturing a single electron, the structure of FIG. 1C can be used as abasic element of the single-electron element. However, in order to applythis structure to the single-electron element, it is necessary toconnect conductors to upper and lower portions of the silicon column.Further, it is preferable to provide a proper gate electrode in theperiphery of the island. A definite method thereof is described inembodiments.

It is known from a paper in Journal of Vacuum Science and Technology,Vol. B11 (1993), pp. 2532-2537 that when a silicon pillar is oxidizedfrom the periphery thereof, the oxidization speed is reduced as theoxidization is advanced and the pillar-shaped silicon line is obtainedin self-limiting manner. This is considered due to the fact that as theoxidization is advanced from the surface of the pillar, the siliconexpands and the stress is exerted within the pillar so that theoxidization is impeded. In order to give such stress within the pillaruniformly to obtain the accurate line, it is considered that thecolumnar pattern is preferable.

FIG. 2 shows an example of a relation of an oxidization time and athickness (t in FIG. 1B) of the oxidized area around the silicon column.Since this relation depends on the pattern form and the oxidizationcondition, it is desirable that these conditions are optimized in orderto make the diameter of the line to a desired value. However, since adiameter of the line obtained finally at the time that the oxidizationis saturated does not depend on the size of the pattern of the laminatedlayers provided before the oxidization, the oxidization is made for asufficient time to thereby obtain the line having a fixed diameterrelatively stably irrespective of scattered size of the originalpattern. For this purpose, it is generally desirable that theoxidization is made until the oxidization speed reaches one fifth orless of a value of the bulk. Anyway, the diameters of the line and theisland in the present invention can be controlled with high accuracy.

Further, the thickness of the insulative layers and the islandinterposed between the insulative layers can be also controlledaccurately in accordance with the fabricating conditions of thelaminated layers. Accordingly, the ultra-small structure which cannot beobtained possibly by the conventional method in which the lithography isused to form the tunnel junctions and the island horizontally can berealized while controlling the property of the junctions and thecapacitance of the island with accuracy. The thickness of the oxidizedlayer and the diameter of the line formed in self-limiting manner can beformed extremely uniformly in a wide area of the substrate. Accordingly,deviation of the electric characteristics within the substrate can besuppressed and it can be desirably applied to the case where a largenumber of elements are integrated.

The device using silicon and oxide layer has been described, while thedevice is not limited to silicon and another semiconductor or metal maybe used. Further, another insulative layer (nitride layer, calciumfluoride, alumina or the like) may be used for the oxide layer.

Further, semiconductors of different kinds may be laminated. Forexample, the line according to the present invention can be formed inthe semiconductor heterostructure having laminated semiconductors havingdifferent band structures. Even in this case, similar effects can beobtained. Further, by laminating a large number of insulative layers andsemiconductor layers, a large number of islands can be arranged in thevertical direction so that the 0-dimensional quantum boxes can be formedthree-dimensionally with very high packing density. Such structure isuseful for various light emitting elements.

Further, by forming the pattern of the laminated layers in whichoxidization is made into an oblong cube, semiconductor or metal linesextending in the substantially parallel direction to the substrate areformed within the cube. Such a structure can be used as one-dimensionalchannel of a field effect transistor, for example. In addition, thepattern of laminated layers can be devised to thereby obtain variousfine structures. Anyway, in order to obtain the single-electron effector the quantum effect at the room temperature, it is preferable that thethickness of the insulative thin layer or the semiconductor or metallayer interposed between two insulative thin layers is equal to orsmaller than 20 nm.

Further, even when the laminated layers are side-etched instead ofoxidized, a similar structure can be obtained, while generally it isnecessary to pay attention to the fact that the etching speeds of theinsulative layer and the semiconductor/metal layer are different in thiscase. Ideally, it is desirable that both the etching speeds are equal,while in order to obtain a desired structure, it is necessary that atleast the etching speed of the insulative layer is slower than that ofthe semiconductor/metal layer.

Further, the electronic device structure proposed specifically by thepresent invention comprises a substrate and a pilar-shaped laminatedpattern of a laminated structure including first thin layers ofsemiconductor or metal formed on the substrate and second thin layers ofinsulator, the laminated structure constituting tunnel junctions.

In such a structure, a gate electrode can be formed on the side of thetunnel junctions (that is, the side of the pillar-shaped structure) tothereby control storage and transfer of electric charges. An area of thetunnel junctions is desirably as small as, for example, 100 nm² or less,preferably about 50 nm² or less. In order to reduce the area of thetunnel junctions, the etching or the oxidization from the side of thelaminated pattern can be used as described above. At this time, aplurality of tunnel junctions may be formed as described above. When anarea for trapping electrons is formed by the tunnel junctions of thelaminated pattern, the area constitutes an electric barrier and the gatecan be used to control a current flowing through the laminated patternin the direction perpendicular to the substrate. Such operation can beused to constitute a transistor element and a memory. Electrodes forinput and output may be disposed in the upper or lower portion of thelaminated pattern and such electrodes can be fabricated by theconventional semiconductor manufacturing technique. In order tofacilitate attachment of the electrodes, it is preferable that thesectional area of the upper or lower (substrate side) of thepillar-shaped structure is made larger than that of the tunneljunctions.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 1C are schematic diagrams illustrating the principle of thepresent invention;

FIG. 2 is a graph showing the characteristic of the fabricating methodof the electronic device according to the present invention;

FIGS. 3A to 3E are sectional views schematically illustrating thefabricating method of the electronic device according to an embodimentof the present invention;

FIGS. 4A and 4B are perspective views schematically illustrating thefabricating method of the electronic device according to anotherembodiment of the present invention; and

FIGS. 5A to 5C are perspective views schematically illustrating thefabricating method of the electronic device according to anotherembodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

EMBODIMENT 1

Referring now to FIGS. 3A to 3E, a transistor element according to anembodiment of the present invention is described. A well 21 is formed ona silicon substrate 22 by means of the conventional ion implantation andlaminated layers 29 including a polysilicon layer 23 (100 nm inthickness), a silicon oxide layer 24 (10 nm in thickness), a polysiliconlayer 25 (10 nm in thickness), a silicon oxide layer 26 (10 nm inthickness), a polysilicon layer 27 (100 nm in thickness) and a siliconnitride layer 28 (100 nm in thickness) are formed on the substrate 22 inorder of the description from the substrate (FIG. 3A).

Further, a negative type resist layer 30 for electron beam is formed onthe laminated layers and then the electron beam lithographic apparatusis used to form a dotted pattern so that a predetermined developing isperformed to form a columnar resist pattern 31 having the diameter of 50nm (FIG. 3B).

Next, the laminated layers disposed below the resist pattern 31 issubjected to anisotropic dry etching while using the resist pattern as amask to form a columnar structure 32 of laminated layers (FIG. 3C).

Thereafter, the columnar structure 32 of laminated layers and an exposedportion of the silicon substrate 32 are subjected to dry oxidizing at850 degrees C for five hours, so that a silicon oxide layer 33 is formedin the area containing a cylindrical portion where the center of thecolumn is left. Since the oxidization speed is reduced as theoxidization is advanced, a silicon line 34 having the diameter of 10 nmis formed in the center of the column in self-limiting manner. Since thesilicon oxide layers 24 and 26 traverse the silicon line 34, fine tunneljunctions 35 and 36 and an island area 37 of silicon are formed in thesilicon line 34 (FIG. 3D).

Further, the polysilicon is formed on the condition that a relativelylarge grain diameter is obtained in order that there is nopolycrystalline grain boundary in the line and the island area.Accordingly, the line and the island area are considered to be made ofmonocrystalline substantially. Since supply of oxygen in the upperportion and the lower portion (specifically lower portion) of the columnis suppressed by a nitride layer cap and the substrate, the diameter ofthe line in the upper and lower portion thereof is large. This structureis preferable for connection of the line to the external wiring.

Next, a source electrode 38 is connected to the upper portion of thesilicon line 34 and a drain electrode 39 is connected to the well 21 towhich the lower portion of the silicon line is connected. Further, agate is formed in the outer portion of the cylinder so that the gatesurrounds the silicon island and a gate electrode 40 is connected to thegate (FIG. 3E).

These electrodes can be formed by using various methods used in theconventional silicon LSI process. The above gate is formed by the sidewall but another method may be used. When the electrodes are connectedto the line, it is necessary to pay sufficient attention so thatexcessive contact resistances are not produced therebetween. When it isnecessary to shorten a distance between the gate and the island, thesilicon oxide layer 23 may be etched to thereby thin the cylindricalsilicon oxide layer surrounding the line.

As a result of investigation of the characteristics of the element atthe room temperature, the Coulomb's stair that a conductance of acurrent flowing in the line with respect to a drain voltage isoscillated has been observed and it has been confirmed that the elementis operated as a single-electron transistor. Further, the conductancebetween the source and the drain could be controlled by the gatevoltage. Accordingly, the element can be used as a three-terminalelement to form a circuit.

In addition, a large number of elements of the embodiment have beenformed in a wide area on the substrate and as a result the thickness ofthe silicon and the oxide layer and the diameter of the line formed inself-limiting manner were extremely uniform within the substrate.Accordingly, the uniform electric characteristics could be obtainedwithin the substrate.

EMBODIMENT 2

FIGS. 4A and 4B illustrate a second embodiment of the present invention.Laminated layers 54 including 20 layers composed of polysilicon layers51 having a thickness of 10 nm and silicon oxide layers 52 having athickness of 10 nm and a silicon nitride layer 53 are formed on asilicon substrate 50. The laminated layers are patterned by the methodsimilar to the first embodiment to form a plurality of hole patterns 55in the laminated layers (FIG. 4A).

In FIG. 4, only a part of the 20 layers are shown. When the laminatedlayers having the plurality of hole patterns are oxidized, theoxidization is advanced from the side of the holes, so that an oxidizedarea is finally formed between nearest holes so that the nearest holescome into contact with each other through the oxidized area and originallaminated layer structures 56 are left in intersection positions ofdiagonal lines connecting four holes (FIG. 4B).

The oxidization is controlled to be stopped when the dimension L in theplane direction of the remaining area of the laminated layers is equalto about 10 nm.

As a result, cubic silicon 0-dimensional quantum boxes 57 having oneside of about 10 nm are arranged at intervals of 20 nm in theperpendicular direction to the substrate. The thickness of layers andthe number of layers are not limited to the values of the embodiment,while it is preferable that the size of the quantum box is set to 20 nmor less.

It is considered that emission of light can be observed by making lightexcitation to the structure obtained by the embodiment.

EMBODIMENT 3

FIGS. 5A to 5C illustrate a third embodiment of the present invention.Laminated layers including 20 layers composed of polysilicon layers 61having a thickness of 10 nm and silicon oxide layers 62 having athickness of 10 nm and a silicon nitride layer (not shown) are formed ona silicon substrate 60. The laminated layers are patterned by the methodsimilar to the first embodiment to form a rectangular parallelepipedicstructure 64 and then a pair of sides 65 of the structure is covered bynitride layers (not shown) (FIG. 5A).

In FIG. 5, only a part of 20 layers is shown. The polysilicon in thelaminated layers is oxidized from a pair of remaining sides which arenot covered by the nitride layers to thereby leave a laminated layerstructure extending in the longitudinal direction in the center of therectangular parallelepiped. The oxidization is controlled to be stoppedwhen a width W (in the plane direction) of the remaining areas of thelaminated layers is equal to about 10 nm. Thereafter, the nitride layersare removed. 20 silicon one-dimensional quantum lines 67 having asectional area of about 10 nm square and extending in the longitudinaldirection in the center of the rectangular parallelepiped are arrangedat intervals of 20 nm in the perpendicular direction to the substrate(FIG. 5B).

In FIG. 5B, the section of the rectangular parallelepiped is illustratedschematically. Then, a gate electrode 68 is formed so that it straddlesthe quantum lines 67 over the oxide layers and the nitride layers andsource and drain electrodes 69 and 70 are connected to both ends of thequantum lines (FIG. 5C).

According to the above element, it is considered that extremelyhigh-speed transistor operation is attained. This is considered by thefact that the mobility of electrons in a channel made of theone-dimensional quantum lines 67 is very large. Further, it isconsidered that even if a length of the channel is shortened, remarkableshort channel effect does not occur and accordingly the element issuitable for fine-structuring.

Further, the nitride layers covering the sides of the rectangularparallelepiped are used to increase the thickness of the lines atchannel ends so as to facilitate connection of the line channel and thegate and drain electrodes, while it is preferable that the nitridelayers are not used when the channel length is short. In this case, itis preferable that the ends of the rectangular parallelepiped areremoved by etching after the oxidization to take out the lines outside.It is necessary to pay sufficient attention to connection of the linesand the electrodes in the same manner as the second embodiment. When itis necessary to shorten a distance between the gate and the channel, theoxide layer may be side-etched. The structure of the laminated layersand the thickness of the layers are not limited to those in theembodiment. However, in order to attain the high-speed performance, itis preferable that the thickness of the semiconductor layers is set to20 nm or less. Further, in order to obtain the sufficient mutualconductance, it is preferable that the number of lines is large. Thesemiconductor hetero junction structure may be used as the laminatedlayers.

The positional relation of the channel and the gate in the embodiment issimilar to the DELTA structure proposed as one aspect of an SOI-MOStransistor. However, a channel in the DELTA structure is produced alonga gate oxide layer in the same manner as the conventional MOSFET, whilein the embodiment the channel is produced in only an extremely limitedarea in the center of the insulative layer interposed between the gate.In the embodiment, since the sides of the channel are determined by theinterface of the silicon and the oxide layers thereof, the sides arevery smooth and influence of scattered electrons in the interface issmall.

According to the present invention, the laminated layers including thesemiconductor or metal layers and the insulative layers are formed onthe substrate and are oxidized from the side thereof to form theoxidized area, so that the 0-dimensional quantum boxes or theone-dimensional quantum lines having the fine tunnel junctionssurrounded by the oxidized area or the 0-dimension quantum boxes or theone-dimensional quantum lines made of the semiconductor or metal areasinterposed between the oxidized area and the insulative thin layers areformed in the laminated layers. Thus, the semiconductor lithographyapparatus and the device fabricating apparatus used in the conventionalsilicon integrated circuit fabrication can be used to accurately attainthe dimension of several nm required to operate the electronic devices,such as single-electron elements, various quantum effect elements andthe like at the room temperature.

Further, in the electronic device provides the columnar semiconductor ormetal lines perpendicular to the substrate and the tunnel junctions orthe quantum boxes disposed on the way thereof in the center portion ofthe cylindrical insulative layer pattern or by providing thesemiconductor or metal lines extending in parallel to the substrate inthe longitudinal direction in the center portion of the rectangularparallelepipedic insulative layer pattern, whereby the electronic devicehas a greatly improved performance as compared with the conventionalelectronic device is obtained.

What is claimed is:
 1. A fabricating method of an electronic devicecomprising:a step of forming laminated layers including semiconductor ormetal thin layers and insulative thin layers on a substrate; a step ofpatterning said laminated layers to form a laminated layer pattern; astep of subjecting said laminated layer pattern to an oxide producingprocess from the side thereof to form a one-dimensional quantum wireincluding fine tunnel junctions; and wherein said laminated layerpattern is in the form of a substantially vertical pillar relative tosaid substrate and said pillar-shaped laminated layers are oxidized fromthe side thereof to thereby form a semiconductor wire or metal wireincluding fine tunnel junctions extending in a substantiallyperpendicular direction to said substrate in the center of said pillar.2. A fabricating method of an electronic device comprising:a step offorming laminated layers including semiconductor or metal thin layersand insulative thin layers on a substrate; a step of patterning saidlaminated layers to form a laminated layer pattern; a step of subjectingsaid laminated layer pattern to an oxide producing process from the sidethereof to form a one-dimensional quantum wire including fine tunneljunctions; and wherein said laminated layers include a structure inwhich said semiconductor or metal thin layers are sandwiched by aplurality of insulative layers and said laminated layer pattern is arectangular parallelepiped having long sides parallel to a surface ofsaid substrate, said laminated layers of said rectangular parallelepipedbeing oxidized from the side thereof to form semiconductor wires ormetal wires extending in a direction parallel to said substrate in saidrectangular parallelepiped.
 3. A fabricating method of an electronicdevice according to claim 1, wherein said laminated layers include asilicon layer, an insulative thin layer, a silicon layer, an insulativethin layer and a silicon layer formed in that order from said substrateand a thickness of said insulative thin layer is equal to or smallerthan 20 nm.
 4. A fabricating method of an electronic device according toclaim 1, wherein said laminated layers include a silicon layer, aninsulative thin layer, a silicon layer, an insulative thin layer and asilicon layer formed in that order from said substrate and a thicknessof said silicon layer interposed between said two insulative thin layersis equal to or smaller than 20 nm.
 5. A fabricating method of anelectronic device comprising:a step of forming laminated layersincluding semiconductor or metal thin layers and insulative thin layerson a substrate; a step of patterning said laminated layers to form alaminated layer pattern; a step of subjecting said laminated layerpattern to an oxide producing process from the side thereof to form aone-dimensional quantum wire including fine tunnel junctions; andwherein said oxide producing process is performed until an oxidizationspeed is less than or equal to one fifth of a value in bulk of saidsemiconductor or metal.
 6. A fabricating method of an electronic devicecomprising:a step of forming laminated layers including semiconductor ormetal thin layers and insulative thin layers on a substrate; a step ofpatterning said laminated layers to form a laminated layer pattern; anda step of subjecting said laminated layer pattern to an oxide producingprocess from the side thereof, wherein said laminated layers include astructure in which said semiconductor or metal thin layers aresurrounded by a plurality of insulative layers and said laminated layerpattern is a rectangular parallelepiped having long sides parallel to asurface of said substrate, said laminated layers of said rectangularparallelepiped being oxidized from the side thereof to formsemiconductor lines or metal lines extending in a direction parallel tosaid substrate in said rectangular parallelepiped.
 7. A fabricatingmethod of an electronic device according to claim 6, wherein said oxideproducing process is performed until an oxidization speed less than orequal to one fifth of a value in bulk of said semiconductor or metal.